| PART |
Description |
Maker |
| ALM31122-BLKG ALM31122-TR1G ALM31122-TR2G |
700MHz - 1GHz 1-Watt High Linearity Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| 908E624 MM908E624ACDWB/R MM908E624 |
Integrated Triple High-Side Switch with Embedded MCU and LIN Serial Communication for Relay Drivers
TRIPLE HIGH-SIDE SWITCH WITH EMBEDDED MCU AND LIN
|
Motorola Inc
Motorola, Inc.
|
| LBS15009 |
150MHz High-Loss SAW Filter 4.60MHz Bandwidth
|
SIPAT Co,Ltd
|
| ATA664151-14 |
LIN System Basis Chip with LIN Transceiver
|
ATMEL Corporation
|
| HA2-2548-5 HA2-2548-9 HA7-2548-5 HA3-2548-5 HA9P25 |
150MHz, High Slew Rate, Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| MM908E62108 |
Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
|
Freescale Semiconductor, Inc
|
| EW750-100-FB EW750-100-GB EW750-100-JB EW750-100-K |
HIGH POWER EDGEWOUND RESISTORS TUBULAR, 75 WATT to 2000 WATT
|
RCD COMPONENTS INC.
|
